Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes

Photon counting techniques with silicon avalanche photodiodes.

The properties of avalanche photodiodes and associated electronics required for photon counting in the Geiger and the sub-Geiger modes are reviewed. When the Geiger mode is used, there are significant improvements reported in overall photon detection efficiencies (approaching 70% at 633 nm), and a timing jitter (under 200 ps) is achieved with passive quenching at high overvoltages (20-30 V). Th...

Avalanche Photodiodes As Single Photon Detectors

Applications of two-photon absorption in silicon

The main theoretical and experimental backgrounds of two-photon absorption (TPA) and TPA-induced free carriers in silicon are presented in detail. In particular, the mostly recent experimental achievements in applications of TPA and TPAinduced free carriers are discussed, such as optical limiting, optical pulse shaping, all-optical switching and modulation, alloptical logic gates, all-optical w...

III-Nitride photon counting avalanche photodiodes

In order for solar and visible blind III-nitride based photodetectors to effectively compete with the detective performance of PMT there is a need to develop photodetectors that take advantage of low noise avalanche gain. Furthermore, in certain applications, it is desirable to obtain UV photon counting performance. In this paper, we review the characteristics of III-nitride visible-blind avala...

Single Photon Avalanche Photodiodes for Near-Infrared Photon Counting

InP-based single photon avalanche diodes (SPADs) have proven to be the most practical solution currently available for many applications requiring high-performance photon counting at near-infrared wavelengths between 1.0 and 1.6 μm. We describe recent progress in the design, characterization, and modeling of InP-based SPADs, particularly with respect to the dark count rate vs. photon detection ...